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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA45H8994M1
RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. The output power and the drain current increase substantially with the gate voltage 2 around 0V (minimum) under the condition when the gate voltage 1 is kept in 3.4V. The nominal output power
becomes available at the state that V
GG2
is 4V (typical) and 5V
(maximum). At this point, VGG1 has to be kept in 3.4V.
At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.8V, VGG1=VGG2=0V)
• Pout>45W, T>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
• Broadband Frequency Range: 896-941MHz
• Metal cap structure that makes the improvements of RF radiation simple
• Low-Power Control Current IGG1+IGG2=0.4mA(typ) @ VGG1=3.4V, VGG2=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
RoHS COMPLIANCE
• RA45H8994M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
How ever, it is applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA45H8994M1-101 Antistatic tray, 10 modules/tray
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG1=3.4V ± 7%, VGG2<5V, Pin=0W 17 V
VGG1 Gate Voltage 1 VGG2<5V, VDD<12.8V, Pin=50mW 4.5 V
VGG2 Gate Voltage 2 VGG1=3.4V ± 7%, VDD<12.8V, Pin=50mW 6 V
Pin Input Power f=896-941MHz, VGG1=3.4V ± 7%, VGG2<5V 100 mW
Pout Output Power 60 W
Tcase(OP) Operation Case Temperature Range -30 to +100 °C
Tstg Storage Temperature Range -40 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
F Frequency Range 896 941 MHz
Pout 1 Output Power 1 VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW 45 W
T Total Efficiency VDD=12.8V VGG1=3.4V VGG2=5V
Pin=50mW 33 %
2fo 2nd Harmonic -40 dBc
3fo 3nd Harmonic -40 dBc
in Input VSWR 3:1 —
IDD Leakage Current VDD=17V, VGG1=VGG2=0V, Pin=0W 1 mA
Pout 2 Output Power 2* VDD=15.2V, VGG1=3.4V, VGG2=1V, Pin=4dBm 2 W
—
Stability VDD=10.0-15.2V, Pin=1-100mW,
1.5<Pout <50W (VGG2 control, VGG1=3.4V),
Load VSWR=3:1
No parasitic oscillation
—
—
Load VSWR Tolerance VDD=15.2V, Pin=50mW,
Pout=45W (VGG2 control, VGG1=3.4V), Load VSWR=20:1
No degradation or destroy
—
*: This is guaranteed as design value.
All parameters, conditions, ratings, and limits are subject to change without notice.
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
O U T P U T P O W E R , T O T AL E F F IC IE N C Y , 2 nd , 3 rd H AR M O N IC S v e r s u s F R E Q U E N C Y
v e r s u s F R E Q U E N C Y
80 -3 0
70
-4 0
60
50 -5 0
40 -6 0
30
-7 0
20
10
860 8 7 0 880 89 0 900 9 1 0 920 9 3 0 940 95 0 960
F R E Q UE NCY f(M H z )
-8 0
860 870 880 89 0 9 0 0 9 1 0 920 930 940 95 0 9 6 0
FRE Q UE NCY f( M H z )
IN P U T V S W R v e r s u s F R E Q U E N C Y
5
4
3
2
1
8 6 0 8 7 0 88 0 8 90 9 0 0
9 1 0 92 0
9 30 940 95 0 9 60
FRE Q U E NCY f( M H z)
O U T P U T P O W E R , P O W E R G AIN a n d O U T P U T P O W E R , P O W E R G AIN a n d
D R AIN C U R R E N T v e r s u s IN P U T P O W E R D R AIN C U R R E N T v e r s u s IN P U T P O W E R
60 24 60 24
50 20 50 20
40 16 40 16
30 12 30 12
20 8 20 8
10 4 10 4
0 0
-1 0 - 5 0 5 1 0 1 5 2 0
IN P U T P O W E R P in (d B m )
0 0
-1 0 - 5 0 5 1 0 1 5 2 0
IN P U T P O W E R P in (d B m )
O U T P U T P O W E R , P O W E R G AIN a n d O U T P U T P O W E R , P O W E R G AIN a n d
D R AIN C U R R E N T v e r s u s IN P U T P O W E R D R AIN C U R R E N T v e r s u s IN P U T P O W E R
60 24 60 24
50 20 50 20
40 16 40 16
30 12 30 12
20 8 20 8
10 4 10 4
0 0
- 1 0 -5 0 5 1 0 1 5 2 0
IN P U T P O W E R P in (d B m )
0 0
-1 0 - 5 0 5 1 0 1 5 2 0
IN P U T P O W E R P in (d B m )
O U T P U T P O W E R a n d D R AIN C U R R E N T O U T P U T P O W E R a n d D R AIN C U R R E N T
v e r s u s D R AIN V O L T AG E v e r s u s D R AIN V O L T AG E
90 18
80 16
70 14
60 12
50 10
40 8
30 6
20 4
10 2
0 0
2 4 6 8 10 12 14 16
D R A IN V O L TA G E V DD (V )
90 18
80 16
70 14
60 12
50 10
40 8
30 6
20 4
10 2
0 0
2 4 6 8 1 0 1 2 1 4 1 6
D R A IN V O L T A G E V DD (V )
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
O U T P U T P O W E R a n d D R AIN C U R R E N T O U T P U T P O W E R a n d D R AIN C U R R E N T
v e r s u s D R AIN V O L T AG E v e r s u s D R AIN V O L T AG E
90 18
80 16
70 14
60 12
50 10
40 8
30 6
20 4
10 2
0 0
2 4 6 8 10 12 14 16
D R A IN V O L T A G E V DD (V )
90 18
80 16
70 14
60 12
50 10
40 8
30 6
20 4
10 2
0 0
2 4 6 8 1 0 1 2 1 4 1 6
D R A IN V O L TA G E V DD (V )
O U T P U T P O W E R a n d D R AIN C U R R E N T O U T P U T P O W E R a n d D R AIN C U R R E N T
v e r s u s G AT E V O L T AG E 2 v e r s u s G AT E V O L T AG E 2
60 12
50 10
40 8
30 6
20 4
10 2
60 12
50 10
40 8
30 6
20 4
10 2
0 0
0 1 2 3 4 5
0
0 1 2
0
3 4 5
G A T E V O L TA G E V G G 2 (V ) G A T E V O L T A G E V G G 2 (V )
O U T P U T P O W E R a n d D R AIN C U R R E N T O U T P U T P O W E R a n d D R AIN C U R R E N T
v e r s u s G AT E V O L T AG E 2 v e r s u s G AT E V O L T AG E 2
60 12
50 10
40 8
30 6
20 4
10 2
60 12
50 10
40 8
30 6
20 4
10 2
0 0
0 1 2 3 4 5
0 0
0 1 2 3 4 5
G A T E V O L T A G E V GG 2 (V ) G A T E V O L T A G E V GG 2 (V )
O U T P U T P O W E R a n d D R AIN C U R R E N T O U T P U T P O W E R a n d D R AIN C U R R E N T
v e r s u s G AT E V O L T AG E 2 v e r s u s G AT E V O L T AG E 2
60 12
50 10
40 8
30 6
20 4
10 2
60
f = 915M H z
V D D = 12. 8V
50 V GG 1 =3 . 4 V
P in =4 d B m
40
30
20
10
P ou t (d B m )
ID D
12
10
8
6
4
P ou t (W ) 2
0 0 0 0
0 1 2 3 4 5
G A T E V O L T A G E V GG 2 (V )
0 1 2 3 4 5
G A T E V O L T A G E V GG 2 (V )
O U T P U T P O W E R a n d D R AIN C U R R E N T O U T P U T P O W E R a n d D R AIN C U R R E N T
v e r s u s G AT E V O L T AG E 2 v e r s u s G AT E V O L T AG E 2
60 12 60 12
50 10 50 10
40 8
30 6
20 4
10 2
0 0
0 1 2 3 4 5
40
30
20
10
0
0 1 2
8
6
4
2
0
3 4 5
G A T E V O L T A G E V GG 2 (V ) G A T E V O L T A G E V GG 2 (V )
OUTLINE DRAWING (mm)
67±1
2-R2±0.5
RF Input added Gate Voltage 1(Pin & VGG1) Gate Voltage 2(VGG2)
Drain Voltage (VDD) RF Output (Pout) RF Ground (Case)
TEST BLOCK DIAGRAM
C1: 4700pF, C2: 1000pF, R1: suitable. Please refer the detail below. C3, C4: 4700pF, 22uF in parallel
VGG1=3.4V
EQUIVALENT CIRCUIT
RF Input added Gate Voltage 1(Pin & VGG1) Gate Voltage 2(VGG2)
Drain Voltage (VDD) RF Output (Pout) RF Ground (Case)
NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm.
External resistance connected to VGG1; impedance between Pin&VGG1 and ground needs to make high impedance that doesn't prevent RF characteristic on this module.
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the
glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the glass-epoxy substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=45W, VDD=12.8V and Pin=50mW each stage transistor operating conditions are:
Stage Pin (W) Pout (W) Rth(ch-case) (°C/W) IDD @ T=33%
(A) VDD (V)
1st 0.05 3.0 3.5 0.62 12.8
2nd 3.0 45.0 0.6 9.96
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.8V x 0.62A – 3.0W + 0.05W) x 3.5°C/W = Tcase + 17.5 °C
Tch2 = Tcase + (12.8V x 9.96A – 45.0W + 3.0W) x 0.6°C/W = Tcase + 51.3 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=45W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (45W/33% - 45W + 0.05W) = 0.33 °C/W
When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is:
Tch1 = Tair + 47.5 °C Tch2 = Tair + 81.3 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating: By the gate voltages (VGG1 and VGG2).
When the gate voltages are close to zero, the nominal output signal (Pout=45W) is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain.
(On the following, V GG1 has to be kept in 3.4V.)
Around VGG2=0V(minimum), the output power and drain current increases substantially.
Around VGG2=4V (typical) to VGG2=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
(On the following, V GG1 has to be kept in 3.4V.)
VGG2 is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Keep safety first in your circuit designs!
SALES CONTACT
JAPAN:
Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku
Tokyo, Japan 100
Email: sod.sophp@hq.melco.co.jp Phone: +81-3-3218-4854
Fax: +81-3-3218-4861
GERMANY:
Mitsubishi Electric Europe B.V. Semiconductor
Gothaer Strasse 8
D-40880 Ratingen, Germany
Email: semis.info@meg.mee.com Phone: +49-2102-486-0
Fax: +49-2102-486-4140
HONG KONG:
Mitsubishi Electric Hong Kong Ltd. Semiconductor Division
41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong
Email: scdinfo@mehk.com Phone: +852 2510-0555
Fax: +852 2510-9822
FRANCE:
Mitsubishi Electric Europe B.V. Semiconductor
25 Boulevard des Bouvets
F-92741 Nanterre Cedex, France Email: semis.info@meg.mee.com Phone: +33-1-55685-668
Fax: +33-1-55685-739
SINGAPORE:
Mitsubishi Electric Asia PTE Ltd Semiconductor Division
307 Alexandra Road
#3-01/02 Mitsubishi Electric Building, Singapore 159943
Email: semicon@asia.meap.com Phone: +65 64 732 308
Fax: +65 64 738 984
ITALY:
Mitsubishi Electric Europe B.V. Semiconductor
Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso
I-20041 Agrate Brianza, Milano, Italy Email: semis.info@meg.mee.com Phone: +39-039-6053-10
Fax: +39-039-6053-212
TAIWAN:
Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department
9F, No. 88, Sec. 6
Chung Shan N. Road Taipei, Taiwan, R.O.C.
Email: metwnssi@metwn.meap.com Phone: +886-2-2836-5288
Fax: +886-2-2833-9793
U.K.:
Mitsubishi Electric Europe B.V. Semiconductor
Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: semis.info@meuk.mee.com Phone: +44-1707-278-900
Fax: +44-1707-278-837
U.S.A.:
Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group
1050 East Arques Avenue Sunnyvale, CA 94085
Email: customerservice@edg.mea.com Phone: 408-730-5900
Fax: 408-737-1129
CANADA:
Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue
Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728
Fax: 905-475-1918
AUSTRALIA:
Mitsubishi Electric Australia, Semiconductor Division
348 Victoria Road
Rydalmere, NSW 2116 Sydney, Australia
Email: semis@meaust.meap.com Phone: +61 2 9684-7210
+61 2 9684 7212
+61 2 9684 7214
+61 3 9262 9898
Fax: +61 2 9684-7208
+61 2 9684 7245
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发表于 2019-12-20 10:20
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